DocumentCode
332672
Title
High power variable attenuator with PIN diodes
Author
Komisarczuk, Jan ; Rychert, Leszek
Author_Institution
Fac. of Electron., Telecommun. & Inf., Tech. Univ. Gdansk, Poland
Volume
3
fYear
1998
fDate
20-22 May 1998
Firstpage
843
Abstract
A concept and design of a high power attenuator for the X-band have been presented. The attenuation is controlled by two PIN diodes. A circuit is based on a ring coupler and it is configured as a reflective one with two external matched loads. Due to poor switching properties of the diodes in the X-band, a special transforming circuit has been proposed. Any attenuation between 1.5 and 20 dB can be obtained with the input VSWR not exceeding 1.5 over the band from 9 to 9.8 GHz
Keywords
microstrip circuits; microwave circuits; p-i-n diodes; power semiconductor diodes; waveguide attenuators; 9 to 9.8 GHz; PIN diodes; SHF; X-band; external matched loads; high power variable attenuator; reflective type; ring coupler; switching properties; transforming circuit; Attenuation; Attenuators; Circuit simulation; Coupling circuits; Diodes; Electrical resistance measurement; Frequency; Insertion loss; Microstrip; Reflection;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwaves and Radar, 1998. MIKON '98., 12th International Conference on
Conference_Location
Krakow
Print_ISBN
83-906662-0-0
Type
conf
DOI
10.1109/MIKON.1998.742838
Filename
742838
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