Title :
Modeling and calculation of nanostructural field emission diode characteristics
Author :
Tatarenko, N.I. ; Vorobyev, A.Y.
Author_Institution :
Sci. Res. Inst. of Precision Devices, Russian Aerospace Agency, Moscow, Russia
Abstract :
A porous anodic alumina (AA) with a regular nanoporous structure, formed naturally (without processes of submicron lithography) is a cheap and unique basis for manufacturing nanoscale field emission devices. This work illustrates the results of modeling and calculation of I-V characteristics of a nanostructural field emission diode (FED) consisting of a regular array of uniform cylindrically shaped diode cells, the outer diameter of which is equal to that of oxide cells (OCs) of AA, and their packing density corresponds to that of OCs
Keywords :
alumina; anodised layers; diodes; electron field emission; nanostructured materials; porous materials; vacuum microelectronics; Al2O3; I-V characteristics; nanostructural field emission diode; porous anodic alumina; Anodes; Diodes; Electromagnetic modeling; Lithography; Manufacturing processes; Maxwell equations; Nanoporous materials; Nanoscale devices; Region 8; Titanium;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939663
