DocumentCode
3327008
Title
Uncoupled mode-space simulation validity for double gate MOSFETs
Author
Sabry, Yasser M. ; Abdolkader, Tarek M. ; Farouk, Wael Fikry
Author_Institution
Dept. of Electron. & Commun., Ain Shams Univ., Cairo
fYear
2007
fDate
29-31 Dec. 2007
Firstpage
351
Lastpage
354
Abstract
The validity of the uncoupled mode space (UMS) approach for simulating double gate MOSFETs in the ballistic limit is examined. The mode space results are compared to the rigorous real space (RS) approach. The critical body thickness, at which the UMS results are no more accurate, is shown to be bias dependent. A computationally efficient method is developed to estimate the validity range of the UMS simulation results without comparing with RS results.
Keywords
Green´s function methods; MOSFET; Green function; double gate MOSFET; uncoupled mode-space simulation validity; Charge carrier processes; Computational modeling; Design engineering; Geometry; Green´s function methods; MOSFETs; Nanoscale devices; Poisson equations; Solid modeling; Space technology; Green¿s function; double gate MOSFET; mode space; non-equilibrium; quantum transport; real space;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2007. ICM 2007. Internatonal Conference on
Conference_Location
Cairo
Print_ISBN
978-1-4244-1846-6
Electronic_ISBN
978-1-4244-1847-3
Type
conf
DOI
10.1109/ICM.2007.4497727
Filename
4497727
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