Title :
Uncoupled mode-space simulation validity for double gate MOSFETs
Author :
Sabry, Yasser M. ; Abdolkader, Tarek M. ; Farouk, Wael Fikry
Author_Institution :
Dept. of Electron. & Commun., Ain Shams Univ., Cairo
Abstract :
The validity of the uncoupled mode space (UMS) approach for simulating double gate MOSFETs in the ballistic limit is examined. The mode space results are compared to the rigorous real space (RS) approach. The critical body thickness, at which the UMS results are no more accurate, is shown to be bias dependent. A computationally efficient method is developed to estimate the validity range of the UMS simulation results without comparing with RS results.
Keywords :
Green´s function methods; MOSFET; Green function; double gate MOSFET; uncoupled mode-space simulation validity; Charge carrier processes; Computational modeling; Design engineering; Geometry; Green´s function methods; MOSFETs; Nanoscale devices; Poisson equations; Solid modeling; Space technology; Green¿s function; double gate MOSFET; mode space; non-equilibrium; quantum transport; real space;
Conference_Titel :
Microelectronics, 2007. ICM 2007. Internatonal Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-4244-1846-6
Electronic_ISBN :
978-1-4244-1847-3
DOI :
10.1109/ICM.2007.4497727
