Title :
A new empirical I-V model for NMOS and PMOS transistors
Author :
Hirata, Francisca I. ; Muller, Muriel ; Ni, Yang ; Gimenes, Claude
Author_Institution :
GET-Inst. Nat. des Telecommun., Evry
Abstract :
This paper describes a new empirical model, capable of modeling with high accuracy the current-voltage (I-V) characteristics of metal-oxide semiconductor (MOS) transistors of n-type (nMOS) and p-type (pMOS). The I-V model presents a simplified parameters extraction method, easy to obtain and to implement using computer aide design (CAD) software. The model was validated under DC and transient simulations. The extraction procedure and results are described in the article.
Keywords :
MOSFET; circuit CAD; semiconductor device models; I-V model; NMOS transistors; PMOS transistors; computer aided design software; current-voltage characteristics; metal-oxide semiconductor transistors; parameters extraction; MOS devices; MOSFETs; CMOS; FET; modeling; nMOS; pMOS;
Conference_Titel :
Microelectronics, 2007. ICM 2007. Internatonal Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-4244-1846-6
Electronic_ISBN :
978-1-4244-1847-3
DOI :
10.1109/ICM.2007.4497728
