DocumentCode
3327025
Title
A new empirical I-V model for NMOS and PMOS transistors
Author
Hirata, Francisca I. ; Muller, Muriel ; Ni, Yang ; Gimenes, Claude
Author_Institution
GET-Inst. Nat. des Telecommun., Evry
fYear
2007
fDate
29-31 Dec. 2007
Firstpage
355
Lastpage
358
Abstract
This paper describes a new empirical model, capable of modeling with high accuracy the current-voltage (I-V) characteristics of metal-oxide semiconductor (MOS) transistors of n-type (nMOS) and p-type (pMOS). The I-V model presents a simplified parameters extraction method, easy to obtain and to implement using computer aide design (CAD) software. The model was validated under DC and transient simulations. The extraction procedure and results are described in the article.
Keywords
MOSFET; circuit CAD; semiconductor device models; I-V model; NMOS transistors; PMOS transistors; computer aided design software; current-voltage characteristics; metal-oxide semiconductor transistors; parameters extraction; MOS devices; MOSFETs; CMOS; FET; modeling; nMOS; pMOS;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2007. ICM 2007. Internatonal Conference on
Conference_Location
Cairo
Print_ISBN
978-1-4244-1846-6
Electronic_ISBN
978-1-4244-1847-3
Type
conf
DOI
10.1109/ICM.2007.4497728
Filename
4497728
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