Field emission characteristics of GaN roughened with H2 plasma

It is known that gallium nitride (GaN) is one of the most attractive materials for blue light emitting diodes and blue lasers. From the experimental fact that the pyramid shape of GaN can be easily formed using the selective growth method by metalorganic chemical vapor deposition (MOCVD), an application of GaN to field emitter array is expected. In contrast to this, we have recently found that the GaN layer is etched with H₂ plasma and that the roughened surface can be formed. This technique is applicable to fabrication of field emitters. This paper demonstrates electron emission from the GaN surface treated with H₂ plasma