DocumentCode
3327185
Title
Field emission photocathode array for high throughput lithography
Author
van Veen, A.H.V. ; Kampherbeek, B.J. ; Wieland, M.J. ; Kruit, P.
Author_Institution
Dept. of Appl. Phys., Delft Univ. of Technol., Netherlands
fYear
2001
fDate
2001
Firstpage
127
Lastpage
128
Abstract
Photo field emitters arrays of p-type silicon are investigated for the use in a new high throughput lithography concept called MAPPER. The first results of experiments with these emitter arrays are presented. The emission is relatively stable and uniform in vacuum of 10-7 mbar, and the emission can be switched on and off with a 633 10 mW laser when the emitter array is cooled down to liquid nitrogen temperature
Keywords
electron beam lithography; electron field emission; elemental semiconductors; photocathodes; silicon; vacuum microelectronics; 10 mW; 10-7 mbar; 633 nm; MAPPER; Si; field emission photocathode array; high throughput lithography; p-type silicon; photo field emitter array; Cathodes; Electron emission; Field emitter arrays; Lithography; Nitrogen; Optical arrays; Physics; Silicon; Temperature; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location
Davis, CA
Print_ISBN
0-7803-7197-6
Type
conf
DOI
10.1109/IVMC.2001.939686
Filename
939686
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