• DocumentCode
    3327185
  • Title

    Field emission photocathode array for high throughput lithography

  • Author

    van Veen, A.H.V. ; Kampherbeek, B.J. ; Wieland, M.J. ; Kruit, P.

  • Author_Institution
    Dept. of Appl. Phys., Delft Univ. of Technol., Netherlands
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    127
  • Lastpage
    128
  • Abstract
    Photo field emitters arrays of p-type silicon are investigated for the use in a new high throughput lithography concept called MAPPER. The first results of experiments with these emitter arrays are presented. The emission is relatively stable and uniform in vacuum of 10-7 mbar, and the emission can be switched on and off with a 633 10 mW laser when the emitter array is cooled down to liquid nitrogen temperature
  • Keywords
    electron beam lithography; electron field emission; elemental semiconductors; photocathodes; silicon; vacuum microelectronics; 10 mW; 10-7 mbar; 633 nm; MAPPER; Si; field emission photocathode array; high throughput lithography; p-type silicon; photo field emitter array; Cathodes; Electron emission; Field emitter arrays; Lithography; Nitrogen; Optical arrays; Physics; Silicon; Temperature; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
  • Conference_Location
    Davis, CA
  • Print_ISBN
    0-7803-7197-6
  • Type

    conf

  • DOI
    10.1109/IVMC.2001.939686
  • Filename
    939686