Title :
Emission characteristics of a gallium arsenide wedge emitter monolithically fabricated with an air bridge and a cantilever anode
Author :
Mimura, H. ; Yilmazoglu, O. ; Shimawaki, Hidetaka ; Yokoo, K. ; Mutamba, K. ; Hartnagel, H.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
GaAs wedge emitters with an air bridge and a cantilever anode were monolithically fabricated using a micromachining technique. The threshold voltage of electron emission is about 8 V for the air bridge emitter, while only 1.5 V for the cantilever emitter. The current-voltage characteristic of the air bridge emitter is due to a field emission, while that of the cantilever emitter is recognized as direct tunneling of electrons through the reduction of the air gap between the emitter and cantilever by electrostatic force
Keywords :
III-V semiconductors; anodes; electron field emission; gallium arsenide; micromachining; semiconductor technology; tunnelling; 1.5 V; 8 V; GaAs; GaAs wedge emitters; air bridge; air bridge emitter; air gap reduction; cantilever anode; cantilever emitter; current-voltage characteristic; direct electron tunneling; electron emission; electrostatic force; emission characteristics; emitter-cantilever air gap; field emission; gallium arsenide wedge emitter; micromachining technique; monolithic fabrication; threshold voltage; Anodes; Bridge circuits; Character recognition; Current-voltage characteristics; Electron emission; Electrostatics; Gallium arsenide; Micromachining; Threshold voltage; Tunneling;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939687
