CMOS transistor-only active inductor for IF/RF applications

This paper describes circuit topologies that are suitable for realising very high frequency transistor-only active inductor in CMOS technology. Based on a low voltage topology, a novel VHF CMOS active inductor is proposed. The proposed inductor can achieve high Q with minimum circuit complexity, thus minimizing noise and power consumption. Comparing to previously reported inductors, the proposed circuit achieves much higher Q for the same power consumption, noise and dynamic range.