DocumentCode
3327323
Title
MOSFET-structured Si FEAs with a built-in ring gate lens
Author
Nagao, M. ; Sato, T. ; Sato, Y. ; Wada, N. ; Nicolaescu, D. ; Matsukawa, T. ; Kanemaru, S. ; Itoh, J.
Author_Institution
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
fYear
2001
fDate
2001
Firstpage
143
Lastpage
144
Abstract
A new MOSFET-structured Si field emitter array (FEA) was proposed, in which a ring structured MOSFET gate electrode surrounds the Si FEA. The ring-structured electrode plays two roles. One role is control of the emission current, and the other role is to focus the electron beam. Electron trajectory simulation indicated that this device has good focusing properties
Keywords
MOSFET; electron beam focusing; elemental semiconductors; silicon; vacuum microelectronics; MOSFET-structured Si FEAs; Si; built-in ring gate lens; electron beam focusing; electron trajectory simulation; emission current control; field emitter array; ring structured MOSFET gate electrode; Anodes; Electrodes; Electron beams; FETs; Field emitter arrays; Lenses; Low voltage; MOSFET circuits; Reluctance generators; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location
Davis, CA
Print_ISBN
0-7803-7197-6
Type
conf
DOI
10.1109/IVMC.2001.939694
Filename
939694
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