Non-Langevin recombination in disordered dielectrics with a random intrinsic potential landscape

Author

Adriaenssens, Guy J. ; Arkhipov, Vladimir I.

Author_Institution

Katholieke Univ., Leuven, Heverlee, Belgium

fYear

1996

fDate

25-30 Sep 1996

Firstpage

123

Lastpage

127

Abstract

A concept of long-range random fluctuations of the potential landscape in disordered semiconductors and dielectrics is employed to and explain the effect of suppressed charge carrier recombination in these materials. The rate of bimolecular recombination is shown to be anomalously low due to spatial separation of electrons and holes in the fluctuating potential landscape. Carriers, excited by irradiation, can avoid geminate recombination due to the effect of a sufficiently strong local electric field coupled to the potential fluctuations

Keywords

amorphous semiconductors; amorphous state; electron-hole recombination; fluctuations; high field effects; photoelectricity; random processes; bimolecular recombination; disordered dielectrics; disordered semiconductors; fluctuating potential landscape; geminate recombination; irradiation; long-range random fluctuations; nonLangevin recombination; potential fluctuations; random intrinsic potential landscape; spatial electron-hole separation; strong local electric field; suppressed charge carrier recombination; Charge carrier processes; Dielectrics; Electron mobility; Fluctuations; Inorganic materials; Kinetic theory; Predictive models; Radiative recombination; Spontaneous emission; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 1996. (ISE 9), 9th International Symposium on

Conference_Location

Shanghai

Print_ISBN

0-7803-2695-4

Type

conf

DOI

10.1109/ISE.1996.578056

Filename

578056