Title :
A silicon MOSFET/field emission array fabricated using CMP
Author :
Hong, C.-Y. ; Akinwande, A.I.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
Integrated lightly doped drain MOSFET is used to control the electron supply of silicon field emission array resulting in low voltage switching of emission current. The LD-MOSFET/FEA was fabricated using isotropic and anisotropic etch of silicon, oxidation sharpening and chemical mechanical polishing. Current voltage characterization of the LD-MOSFET/FEA demonstrated modulation of electron emission by the MOSFET gate voltage. Numerical simulation studies of the device operation will also be presented
Keywords :
MOSFET; chemical mechanical polishing; electron field emission; elemental semiconductors; etching; oxidation; silicon; vacuum microelectronics; LD-MOSFET/FEA; Si; anisotropic etching; chemical-mechanical polishing; current-voltage characteristics; electron emission modulation; fabrication; isotropic etching; lightly doped drain MOSFET; low-voltage switching; numerical simulation; oxidation sharpening; silicon field emission array; Anisotropic magnetoresistance; Electron emission; Etching; Field emitter arrays; Lighting control; Low voltage; MOSFET circuits; Optical arrays; Silicon; Voltage control;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939695
