Title :
A pnpn GaAs-InGaAs optoelectronic switch
Author :
Der-Feng Guo ; Jung-Hui Tsai ; Chien-Ming Li
Author_Institution :
Dept. of Electron. Eng., Air Force Acad., Kangshan
Abstract :
An optoelectronic switch with both n- and p-type delta-doped (delta-doped) quantum wells was investigated. The delta-doped structures formed potential wells for the carrier accumulation and potential barriers for the carrier injection. Being possessed of delta-doped sheets with different doping levels, the potential barriers were sequentially collapsed to produce a double negative-differential-resistance (NDR) phenomenon in the current-voltage (I-V) characteristics of the device due to the carrier accumulation in the potential wells. The device also showed an optical function related to the barrier heights controllable by incident light.
Keywords :
gallium arsenide; indium compounds; optoelectronic devices; semiconductor quantum wells; semiconductor switches; carrier accumulation; carrier injection; double negative-differential-resistance phenomenon; pnpn optoelectronic switch; potential barriers; quantum wells; CMOS technology; Chemicals; Dielectric substrates; Educational institutions; Germanium silicon alloys; MOS devices; Oxidation; Silicon germanium; Temperature; Voltage; delta-doped; negative differential resistance; optoelectronic switch;
Conference_Titel :
Microelectronics, 2007. ICM 2007. Internatonal Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-4244-1846-6
Electronic_ISBN :
978-1-4244-1847-3
DOI :
10.1109/ICM.2007.4497746
