Lateral field emitter arrays with higher emission currents and wider operation region by high field activation

Author

Lee, Jae-Hoon ; Kwon, Ki-Rock ; Lee, Hyung-ju ; Lee, Myoung-Bok ; Sea, Hwa-Il ; Kwon, Dae-Hyuk ; Kim, Jin-Sup ; Choi, Yu-man ; Hahm, Sung-Ho ; Lee, Jung-Hee

Author_Institution

Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Taegu, South Korea

fYear

2001

fDate

2001

Firstpage

149

Lastpage

150

Abstract

Lateral-type polysilicon field emission triode, consisting of two symmetric gate tips aligned by an angle of 70° with respect to the sharp cathode tips was fabricated by using local oxidation of polysilicon (LOCOS) process. The fabricated device has the electrical characteristics of a low turn-on voltage of 13 V and the emission anode current of 150 μA/50tips at V_AC = 50 V and V_GC = open. After high field activation treatment, the turn-on voltage was down to 2 V and the emission current increased up to 525 μA/50tips at V_AC = 50 V and V_GC = open. Furthermore, the emission current versus gate biases indicated a dramatic change of emission currents from gate tip-end resulting in an interesting operational behavior

Keywords

electron field emission; elemental semiconductors; oxidation; silicon; triodes; vacuum microelectronics; 13 V; 150 muA; 525 muA; LOCOS process; Si; electrical characteristics; emission current; fabrication; high field activation; lateral field emitter array; operation region; polysilicon field emission triode; turn-on voltage; vacuum microelectronic device; Anodes; Cathodes; Diodes; Educational technology; Electric variables; Electron emission; Field emitter arrays; Low voltage; Microelectronics; Oxidation;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939697

Filename

939697