A novel process of achieving sub-micron gate holes for high-frequency operation of field emitter arrays

Author

Uhm, H.S. ; Lee, J.H. ; Song, Y.H. ; Cho, Y.R. ; Whang, C.S. ; Kim, D.H. ; Cho, K.I. ; Park, C.K. ; Park, J.S.

Author_Institution

Dept. of Electr. Eng., Hanyang Univ., Kyonggi, South Korea

fYear

2001

fDate

2001

Firstpage

151

Lastpage

152

Abstract

A novel process to develop field emitter arrays (FEAs) with sub-micron gate holes for high-frequency (GHz) operation of FEA-based microtriode amplifiers is proposed. The formation of amorphous silicon (a-Si) sidewall may be the key technology used to obtain the emitter structure. Scanning electron microscope (SEM) images, field-emission properties, transconductances, and capacitances of the emitters fabricated are presented. Theoretical considerations on the proposed structure are also discussed

Keywords

electron field emission; microwave amplifiers; microwave tubes; scanning electron microscopy; triodes; vacuum microelectronics; Si; amorphous silicon sidewall; capacitance; field emission; field emitter array; high-frequency operation; microtriode amplifier; scanning electron microscopy; sub-micron gate holes; transconductance; Capacitance; Cathodes; Cutoff frequency; Dielectrics; Electrodes; Etching; Field emitter arrays; Microwave devices; Operational amplifiers; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939698

Filename

939698