• DocumentCode
    3327714
  • Title

    Blue-emitting ZnS:Ag,Al phosphor with low defect density for high-voltage field emission displays

  • Author

    Kajiwara, K. ; Hida, T. ; Tanaka, K.

  • Author_Institution
    Sony Corp. Atsugi Tec. No.2, Kanagawa, Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    185
  • Lastpage
    186
  • Abstract
    In recent years, deterioration of luminescence efficiency of blue-emitting ZnS:Ag,Al powder phosphors has been investigated for high-voltage (e.g. 6-10 kV) field emission displays (FEDs). It has been found by cross-sectional transmission electron microscopy (TEM) that the degree of crystallinity of ZnS host crystal within the electron penetration depth (e.g. 300 nm) is one of the important factors in order to obtain ZnS:Ag,Al phosphors having a longer lifetime of luminescence efficiency. Taking the evidence available into account, necessary characteristics for a suitable ZnS:Ag,Al phosphor with a lower defect density, N0 are speculated to be the optimum amount of Ag activator and equal mole-fraction of Al coactivator, lower amounts of residual flux impurities, typically chlorine, and smaller atomic-scale surface roughness. Therefore, ZnS:Ag,Al phosphors with a lower N0 for FED use compared with a P22B ZnS:Ag,Al(Cl) phosphor for color-TV use have been developed by using a suitable firing method and an additional annealing treatment
  • Keywords
    II-VI semiconductors; aluminium; annealing; field emission displays; phosphors; quenching (thermal); silver; zinc compounds; 300 nm; 6 to 10 kV; TEM; ZnS:Ag,Al; ZnS:Ag,Al phosphor; annealing treatment; atomic-scale surface roughness; blue emission; degree of crystallinity; electron penetration depth; firing method; high-voltage field emission displays; low defect density; luminescence efficiency; powder phosphors; residual flux impurities; transmission electron microscopy; Crystallization; Flat panel displays; Impurities; Luminescence; Phosphors; Powders; Rough surfaces; Surface roughness; Transmission electron microscopy; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
  • Conference_Location
    Davis, CA
  • Print_ISBN
    0-7803-7197-6
  • Type

    conf

  • DOI
    10.1109/IVMC.2001.939715
  • Filename
    939715