MOSFET-controlled field emission display (MCFED)

Author

Lee, Jong Duk ; Kim, Hwan, II ; Oh, Chang Woo ; Park, Jae Woo ; Park, Byung Gook

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2001

fDate

2001

Firstpage

189

Lastpage

190

Abstract

To evaluate the validity of MCFEA for display application, a 0.7"-diagonal monochrome MCFED was fabricated. The electrical properties of FEA, HVMOSFET, and MCFEA were measured respectively. The gate hole diameter of a fabricated FEA is 1.25 μm and the extraction gate voltage to obtain the emission current of 10 nA/tip is 71 V. The threshold voltage and the breakdown voltage of a HVMOSFET are 1.4 V and 81 V. The I-V characteristics of a MCFEA shows that the emission currents of FEA are well controlled by the control gate bias of HVMOSFET. To exclude the harmful effects due to packaging process, the performance of the MCFED was evaluated in a high vacuum chamber. The MCFED shows the better uniformity than a conventional FED

Keywords

field emission displays; power MOSFET; semiconductor device breakdown; 0.7 in; 1.25 micron; 1.4 V; 10 nA; 71 V; 81 V; FEA; HVMOSFET; I-V characteristics; MCFEA; MCFED; MOSFET-controlled field emission display; breakdown voltage; electrical properties; threshold voltage; Anodes; Breakdown voltage; Electric variables measurement; Field emitter arrays; Flat panel displays; MOSFET circuits; Pollution measurement; Stability; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939717

Filename

939717