• DocumentCode
    3327849
  • Title

    Influence of gas source supply interruption on quantum well structure of few monolayer InP/In0.53Ga0.47As/InP grown by OMVPE

  • Author

    Pecharapa, W. ; Techitdheera, W. ; Nukeaw, J.

  • Author_Institution
    Fac. of Sci., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
  • Volume
    2
  • fYear
    2002
  • fDate
    11-14 Dec. 2002
  • Firstpage
    1368
  • Abstract
    A model of asymmetric stepped quantum well affected by gas source supply interruption at the interface of extremely thin InP/In0.53Ga0.47As/InP single quantum well grown by organometallic vapor phase epitaxy (OMVPE) is developed. The energy levels in the well and the intersubband transition energies are carried out and compared to experimental data from photoreflectance spectroscopy.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; photoreflectance; semiconductor growth; semiconductor quantum wells; InP-In0.53Ga0.47As-InP; OMVPE; energy levels; gas source supply interruption; intersubband transition energies; organometallic vapor phase epitaxy; photoreflectance spectroscopy; quantum well structure; semiconductor quantum well; Energy states; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optical sensors; Quantum well lasers; Semiconductor lasers; Spectroscopy; Substrates; Time of arrival estimation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Technology, 2002. IEEE ICIT '02. 2002 IEEE International Conference on
  • Print_ISBN
    0-7803-7657-9
  • Type

    conf

  • DOI
    10.1109/ICIT.2002.1189379
  • Filename
    1189379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3327849