Title :
A survey of gallium arsenide technology and fault characterization in basic gates
Author :
Al-Arian, Sami A. ; Abujbara, Hussam Y.
Author_Institution :
Dept. of Comput. Sci. & Eng., South Florida Univ., Tampa, FL, USA
Abstract :
GaAs technology is reviewed from a testing-engineer point of view, and the fault behavior of GaAs transistor is examined. Timing faults are shown to be the most serious faults in GaAs. Timing algebra is presented to propagate and detect timing faults in the gate-level simulation. Simulation results for the same type of faults in a DCFL (direct-coupled FET logic) inverter are shown using the modified SPICE3 MESFET model and they were compared with the corresponding results for high-electron-mobility transistor simulation model. Standards for fault behavior study are listed to assist in drawing useful comparisons among different GaAs technologies. Finally, it is suggested that it might be possible to make use of existing CMOS fault models to detect both timing and traditional stuck-at faults in GaAs
Keywords :
III-V semiconductors; Schottky gate field effect transistors; fault location; field effect integrated circuits; gallium arsenide; high electron mobility transistors; integrated circuit testing; integrated logic circuits; logic testing; reviews; CMOS fault models; DCFL invertor; GaAs technology; HEMT simulation model; IC testing; III-V semiconductors; direct-coupled FET logic; fault characterization; gate-level simulation; high-electron-mobility transistor; logic testing; modified SPICE3 MESFET model; stuck-at faults; timing algebra; timing faults; Algebra; FETs; Fault detection; Gallium arsenide; HEMTs; MESFETs; Pulse inverters; Semiconductor device modeling; Testing; Timing;
Conference_Titel :
Southeastcon '89. Proceedings. Energy and Information Technologies in the Southeast., IEEE
Conference_Location :
Columbia, SC
DOI :
10.1109/SECON.1989.132605
