Title :
Properties of phosphorus implanted mold type diamond FEAs
Author :
Lee, Jong Duk ; Cho, Euo Sik ; Park, Byung-Gook ; Kwon, Sang Jik
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
Phosphorus implantation was performed at various process steps in the fabrication of the mold type diamond FEAs. Fabricated doped diamond FEAs were structurally investigated by scanning electron microscope (SEM) and Raman spectroscopy and the results were compared with those of flat diamond films. The Raman spectroscopy showed the same doping effect on both flat film and mold FEAs in the same doping condition
Keywords :
Raman spectra; diamond; ion implantation; moulding; phosphorus; scanning electron microscopy; vacuum microelectronics; C:P; Raman spectroscopy; doping effect; fabrication; flat film; mold-type diamond FEA; phosphorus implantation; scanning electron microscopy; Bonding; Doping; Electric variables; Fabrication; Glass; Ion implantation; Raman scattering; Scanning electron microscopy; Spectroscopy; Substrates;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939724
