GaN planar-doped-barrier electron emitter with piezoelectric surface barrier lowering

Author

Shen, L. ; Smochkova, I.P. ; Green, D.S. ; Heikman, S. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2001

fDate

2001

Firstpage

223

Lastpage

224

Abstract

A planar novel vacuum microelectronic electron emitter in InGaN-GaN with a planar-doped-barrier structure was designed, grown by MBE and fabricated. The InGaN was introduced as a robust replacement for Cs to lower the surface barrier by using its piezoelectric property. Emission current and efficiency of 5×10^-5 A/cm² and 5.7×10^-7 were obtained. The low current and efficiency are due to the oxidation of the surface, dislocation-assisted tunneling current and low breakdown

Keywords

III-V semiconductors; doping profiles; gallium compounds; indium compounds; molecular beam epitaxial growth; piezoelectricity; semiconductor growth; vacuum microelectronics; wide band gap semiconductors; 0.000057 percent; GaN planar-doped-barrier electron emitter; InGaN piezoelectric property; InGaN-GaN; InGaN-GaN vacuum microelectronic electron emitter; MBE growth; breakdown; dislocation-assisted tunneling current; emission current; emission efficiency; piezoelectric surface barrier lowering; planar doped-barrier structure; surface barrier; surface oxidation; Degradation; Diodes; Electric breakdown; Electron emission; Electron guns; Gallium nitride; Microelectronics; Scattering; Surface resistance; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939734

Filename

939734