Improved field emission characteristics of GaN by BN coating

Author

Kimura, Chiharu ; Yamamoto, Tomohide ; Sugino, Takashi

Author_Institution

Dept. of Electr. Eng., Osaka Univ., Japan

fYear

2001

fDate

2001

Firstpage

225

Lastpage

226

Abstract

Summary form only given. Development of cold cathodes with high performance such as a high emission current operation at a low voltage is strongly desired for application to vacuum microelectronics and field emission displays. Boron nitride (BN) is one of the most promising materials for cold cathodes because negative electron affinity (NEA) appears on the surface. Moreover, BN films can be deposited at a low temperature by plasma-assisted chemical vapor deposition. In this paper, the effect of BN coating on an improvement of field emission characteristics of the cold cathode is investigated. The electron emission mechanism of BN film is mentioned. Furthermore, it is demonstrated using gallium nitride (GaN) cold cathodes that BN coating is effective in improving field emission characteristics. GaN layers grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) were used in the present experiment

Keywords

III-V semiconductors; cold-cathode tubes; electron affinity; field emission displays; gallium compounds; plasma CVD; vacuum microelectronics; wide band gap semiconductors; Al₂O₃; BN-GaN-Al₂O₃; cold cathodes; emission current; field emission displays; negative electron affinity; plasma-assisted chemical vapor deposition; vacuum microelectronics; Boron; Cathodes; Chemical vapor deposition; Coatings; Flat panel displays; Gallium nitride; Low voltage; Microelectronics; Plasma displays; Plasma temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International

Conference_Location

Davis, CA

Print_ISBN

0-7803-7197-6

Type

conf

DOI

10.1109/IVMC.2001.939735

Filename

939735