DocumentCode :
3328155
Title :
Luminescence Properties of Post-Processing Porous Silicon Material
Author :
Meiling Yuan ; Lu Tang ; Chenfa Li ; Qingnian Wang ; Xiaofeng Zhang
Author_Institution :
Dept. of Phys., Nanchang Univ., Nanchang, China
fYear :
2011
fDate :
16-18 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
This article gives two new and simple methods to treat porous silicon material, including acid treatment and cathode reduction treatment, to improve luminescence properties of porous silicon material. The results show that: the processing of cathode reduction can improve luminescence stability of porous silicon; the processing of acid treatment can effectively improve luminescence intensity of porous silicon. A conclusion can be drawn that the method of firstly processed porous silicon with cathode reduction treatment and secondly acid treatment has better effect to porous silicon luminescence intensity and stability than that of firstly acid treatment and secondly cathode reduction treatment.
Keywords :
electrochemical electrodes; elemental semiconductors; photoluminescence; porous semiconductors; silicon; Si; acid treatment; cathode reduction treatment; luminescence properties; photoluminescence spectrum; post-processing porous silicon material; Cathodes; Fluorescence; Photoluminescence; Silicon; Stability analysis; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2011 Symposium on
Conference_Location :
Wuhan
ISSN :
2156-8464
Print_ISBN :
978-1-4244-6555-2
Type :
conf
DOI :
10.1109/SOPO.2011.5780603
Filename :
5780603
Link To Document :
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