DocumentCode
3328163
Title
Analysis of the slope of the Fowler-Nordheim plot for field emission from semiconductors [GaN and Si]
Author
Chung, M.S. ; Yoon, B.G.
Author_Institution
Dept. of Phys., Ulsan Univ., South Korea
fYear
2001
fDate
2001
Firstpage
231
Lastpage
232
Abstract
The field emission current densities j from semiconductors are obtained using a fully exact calculation scheme and are plotted in the Fowler-Nordheim (FN) coordinates. In the range of j⩽103A/cm2, the slope of the FN plots for semiconductors has two values while it is constant for metals. It is found that the nonlinearity in slope of the FN curve reflects the mixed effects of the barrier height, the carrier supply, tunneling, and involved energy bands
Keywords
III-V semiconductors; current density; electron field emission; elemental semiconductors; gallium compounds; silicon; tunnelling; wide band gap semiconductors; Fowler-Nordheim plot; GaN; Si; barrier height; carrier supply; energy bands; field emission current densities; semiconductors; slope nonlinearity; tunneling; Cathodes; Conducting materials; Current density; Electrons; Feeds; Gallium nitride; Nonlinear equations; Physics; Semiconductor materials; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location
Davis, CA
Print_ISBN
0-7803-7197-6
Type
conf
DOI
10.1109/IVMC.2001.939738
Filename
939738
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