SEM study of physical properties of semiconductor by surface electron beam exciting potential

Applies a novel contactless method to investigate the physical properties of the semiconductor materials. This method is based upon the measurement of the surface electron beam exciting potential (SEBEP) on the sample surface. Its advantages include: (1) no direct sample contact or connection needed unlike the electron beam induced current (EBIC) method; (2) no potential barrier required from the measurement. The detection method is useful to study semiconductor physics and production of IC and vacuum microelectronic devices (VMD). Electron probe irradiation can cause bending of the energy bands, variation of carriers and excitation of surface potential of a semiconductor. The excited surface potential generates the SEBEP signal that can be detected by a SEBEP detector. It is necessary to emphasize that the electron beam can charge the surface of the semiconductor that is below the insulation layer when it passes through the surface insulation layer of the sample