Title :
Nonlinear Gain and Related Effects in Quantum-Well Heterostructures
Author :
Kononenko, Valerii K.
Author_Institution :
Stepanov Inst. of Phys. NASB, Minsk
Abstract :
The gain saturation in quantum-well heterostructures under the change in the populations of the subband levels is described in detail. The nonlinearity parameters are introduced and their change with the pump, radiation frequency, temperature, and the quantum well level distribution is examined. The main attention is given to quantum-well heterostructures based on III-V compounds, including GalnAsSb, GalnAs, GalnAsP, GaAs, and GalnN, which emit in the spectral interval from the mid-infrared to visible light.
Keywords :
III-V semiconductors; semiconductor quantum wells; III-V compounds; nonlinear gain; quantum well level distribution; quantum-well heterostructures; subband levels; Diode lasers; Frequency; Gallium arsenide; III-V semiconductor materials; Nonlinear optics; Optical refraction; Optical saturation; Quantum well lasers; Quantum wells; Temperature distribution; amplifier; gain saturation; laser diode; nonlinearity parameter; quantum well;
Conference_Titel :
Transparent Optical Networks, 2007. ICTON '07. 9th International Conference on
Conference_Location :
Rome
Print_ISBN :
1-4244-1249-8
Electronic_ISBN :
1-4244-1249-8
DOI :
10.1109/ICTON.2007.4296197
