DocumentCode
3328321
Title
A family of millimeter-wave MMIC amplifiers and modules
Author
Itoh, Yasushi
Author_Institution
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
fYear
1997
fDate
7-8 Jul 1997
Firstpage
15
Lastpage
18
Abstract
This paper presents our current design and development information on a family of millimeter-wave monolithic AlGaAs/InGaAs pseudomorphic low-noise HEMT amplifiers and modules operating at V- and W-bands, addressing amplifier/module design and fabrication techniques
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit noise; AlGaAs-InGaAs; III-V semiconductors; V-band; W-band; amplifier/module design; fabrication techniques; millimeter-wave MMIC amplifiers; pseudomorphic low-noise HEMT amplifiers; Circuit noise; Gain measurement; Impedance matching; Low-noise amplifiers; MMICs; Millimeter wave radar; Millimeter wave technology; Noise figure; Noise measurement; PHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Waves, 1997 Topical Symposium on
Conference_Location
Kanagawa
Print_ISBN
0-7803-3887-1
Type
conf
DOI
10.1109/TSMW.1997.702433
Filename
702433
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