Title :
Transient current testing of 0.25 μm CMOS devices
Author :
Kruseman, Bram ; Janssen, Peter ; Zieren, Victor
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Transient current testing (IDDT) has been often cited as an alternative and/or supplement to IDDQ testing. The effectiveness of our IDDT test method is compared with IDDQ as well as with SA-based voltage testing for devices produced in 0.25 μm technology. For these devices a large vector-to-vector spread in IDDT is observed. This spread is investigated together with the die-to-die spread to determine a pass/fail criterion. The vector-to-vector spread is compensated by comparing the measured IDDT values with those of a known good (golden) device. A hardware solution for an IDDT monitor is presented which includes a correction for the golden device signature. Therefore real-time IDDT testing on a digital tester without data-processing becomes feasible
Keywords :
CMOS digital integrated circuits; VLSI; automatic test pattern generation; electric current measurement; integrated circuit testing; production testing; 0.25 micron; VLSI; die-to-die spread; digital tester; golden device signature correction; hardware solution; known good device; large vector-to-vector spread; pass/fail criterion; quarter-micron CMOS devices; real-time IDDT testing; transient current testing; Circuit testing; Costs; Hardware; Laboratories; MOSFETs; Monitoring; Silicon on insulator technology; Software testing; Threshold current; Voltage;
Conference_Titel :
Test Conference, 1999. Proceedings. International
Conference_Location :
Atlantic City, NJ
Print_ISBN :
0-7803-5753-1
DOI :
10.1109/TEST.1999.805613
