Title :
Effect of interface roughness on field electron emission of amorphous diamond film emitter
Author :
Chen, Jian ; Xu, N.S. ; Deng, S.Z. ; Chen, Jun
Author_Institution :
Guangdong Province Key Lab for Display Mater. & Technol., Zhongshan Univ., Guangzhou, China
Abstract :
Micro surface roughness of substrates is very important for low field emission of diamond and related materials. High roughness can lower the initial field required for injecting electrons from the substrate to the amorphous diamond film. With amorphous diamond film deposited on a chemically etched silicon substrate under different concentration, temperature and time, we have obtained an optimal condition for field emission
Keywords :
amorphous semiconductors; diamond; electron field emission; interface roughness; C; Si; amorphous diamond film emitter; chemical etching Si substrate; concentration; field electron emission; interface roughness; temperature; time; Amorphous materials; Chemicals; Electron emission; Etching; Rough surfaces; Semiconductor films; Silicon; Substrates; Surface roughness; Temperature;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939766
