Title :
High frequency high power MOSFET development
Author :
Krausse, George J.
Author_Institution :
Directed Energy Inc., Fort Collins, CO, USA
fDate :
30 June-3 July 2002
Abstract :
This paper discusses in detail the development of a new class of power MOSFETs designed from the silicon die and the substrate to the heat sink with the goals of nanosecond switching and VHF operation at power levels in the kilowatts. There are three aspects to this development. First is the semiconductor die. Second is the packaging. Third are the heat sink and the package interface. All of these are addressed.
Keywords :
elemental semiconductors; heat sinks; power MOSFET; power semiconductor switches; silicon; substrates; VHF operation; heat sink; high frequency high power MOSFET; nanosecond switching; package interface; packaging; power levels; semiconductor die; silicon die; substrate; Frequency; Heat sinks; Inductance; MOSFET circuits; Physics; Power MOSFET; Semiconductor device packaging; Silicon; Topology; Voltage;
Conference_Titel :
Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Conference Record of the Twenty-Fifth International
Print_ISBN :
0-7803-7540-8
DOI :
10.1109/MODSYM.2002.1189449
