DocumentCode
3328711
Title
GaAs MMICs for an 80-110 GHz planar receiver array
Author
Archer, John W. ; Sevimli, Oya ; Wang, Xinmin ; Fitzpatrick, Aiding
Author_Institution
Telecommun. & Ind. Phys., CSIRO, Epping, NSW, Australia
fYear
1997
fDate
7-8 Jul 1997
Firstpage
23
Lastpage
26
Abstract
This paper describes the development of novel GaAs MMICs which are to be used to implement a planar array of single-sideband, ultra-low-noise receivers. The receivers may be adjusted to operate at any frequency between 80 and 110 GHz, with image rejection greater than 15 dB, by tuning the local oscillator. The MMICs have been designed to perform well when cryogenically cooled to below 20 K
Keywords
HEMT integrated circuits; III-V semiconductors; MIMIC; circuit tuning; cryogenic electronics; gallium arsenide; millimetre wave antenna arrays; millimetre wave receivers; 80 to 110 GHz; GaAs; III-V semiconductors; MMICs; cryogenic cooling; image rejection; planar receiver array; single-sideband receivers; tuning; ultra-low-noise receivers; Antenna arrays; Circuits; Frequency; Gallium arsenide; HEMTs; Local oscillators; MMICs; Planar arrays; Prototypes; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Waves, 1997 Topical Symposium on
Conference_Location
Kanagawa
Print_ISBN
0-7803-3887-1
Type
conf
DOI
10.1109/TSMW.1997.702435
Filename
702435
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