DocumentCode :
3328767
Title :
Temperature dependence on electron emission of boron-doped diamond
Author :
Yamada, Takatoshi ; Sawabe, Atsuhito ; Suzuki, Yu ; Okano, Ken
Author_Institution :
Aoyama Gakuin Univ., Tokyo, Japan
fYear :
2001
fDate :
2001
Firstpage :
299
Lastpage :
300
Abstract :
Temperature dependence on electron emission of B-doped CVD diamond is investigated in order to understand the electron emission properties. Films are deposited on Si substrate using dc plasma CVD. The obtained films are identified as polycrystalline diamond using XRD, RHEED, EELS and Raman spectroscopy. The threshold voltage in the electron emission properties becomes lower as increasing the temperature
Keywords :
Raman spectra; X-ray diffraction; boron; diamond; electron energy loss spectra; electron field emission; plasma CVD coatings; reflection high energy electron diffraction; C:B; DC plasma CVD; EELS; RHEED; Raman spectroscopy; Si; Si substrate; XRD; boron doped polycrystalline diamond film; electron emission; temperature dependence; threshold voltage; Anodes; Cathodes; Electron emission; Plasma materials processing; Plasma properties; Plasma temperature; Semiconductor films; Substrates; Temperature dependence; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
Type :
conf
DOI :
10.1109/IVMC.2001.939772
Filename :
939772
Link To Document :
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