DocumentCode
3329072
Title
Infrared response and quantum efficiency of in-doped silicon (n) structure
Author
Mohamed, Wagah F. ; Mohammed, Khalid K.
Author_Institution
Dept. of Electr. Eng., Mosul Univ., Iraq
fYear
2000
fDate
2000
Firstpage
17
Lastpage
21
Abstract
In this paper indium is examined for use as an electrical and optical dopant with the n-type silicon wafer to fabricate the In-doped silicon (n) structure. The subgap response of the resulting structure is particularly strong and extends to wavelengths up to 1100 nm, and more. While the response of the structure is very poor at the visible region. The structure has a maximum external and internal quantum efficiency at wavelength equal to 1100 nm
Keywords
elemental semiconductors; indium; semiconductor doping; silicon; solar cells; 1100 nm; In doped Si structure; Si:In; electrical dopant; electron-hole pairs; impurity photovoltaic effect; maximum external quantum efficiency; maximum internal quantum efficiency; multi-step absorption mechanism; n-type silicon wafer; optical dopant; solar cell; solar cell infrared response; spectral responsivity measurements; subgap photons; subgap response; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Environment and Solar, 2000 Mediterranean Conference for
Conference_Location
Beirut
Print_ISBN
0-7803-7117-8
Type
conf
DOI
10.1109/CMPLES.2000.939852
Filename
939852
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