Title :
Diffusion processes of copper in thin film CdS-Cu2S solar cells
Author :
Hariri, A. ; Mialhe, P. ; Scott, C.G. ; Aldin, N. Saad
Author_Institution :
Dept. of Phys., Univ. of Aleppo, Syria
Abstract :
As we have published earlier, there is a considerable penetration of copper into the CdS in both the grain and the grain boundary regions. It is of technical as well as general scientific interest to study this diffusion process and also to estimate the values of the diffusion coefficient of copper in these two regions during post-annealing treatment under three different ambient atmospheres (air, vacuum or hydrogen). The diffusion of copper has been studied by Auger electron spectroscopy. The results show that at the temperatures frequently used in post-annealing treatment, hydrogen annealing provides a significantly lower ratio of grain boundary diffusion coefficient Dgb to grain diffusion coefficient Dg than the other two cases
Keywords :
Auger electron spectroscopy; II-VI semiconductors; annealing; cadmium compounds; copper compounds; grain boundary diffusion; semiconductor thin films; solar cells; Auger electron spectroscopy; CdS-Cu2S; air atmosphere; ambient atmospheres; copper; diffusion coefficient; diffusion process; grain boundary diffusion coefficient; grain boundary regions; grain diffusion coefficient; hydrogen annealing; hydrogen atmosphere; post-annealing treatment; thin film CdS-Cu2S solar cells; vacuum atmosphere; Atmosphere; Copper; Diffusion processes; Electrons; Grain boundaries; Hydrogen; Spectroscopy; Temperature; Transistors; Vacuum technology;
Conference_Titel :
Environment and Solar, 2000 Mediterranean Conference for
Conference_Location :
Beirut
Print_ISBN :
0-7803-7117-8
DOI :
10.1109/CMPLES.2000.939853
