DocumentCode :
3329126
Title :
Lifetime considerations of high voltage semiconductor diodes for pulsed power applications
Author :
Hartmann, Wemer ; Haas, Wilfried ; Romheld, Michael ; Grass, Norbert
Author_Institution :
Corporate Technol., Siemens AG, Erlangen, Germany
fYear :
2002
fDate :
30 June-3 July 2002
Firstpage :
297
Lastpage :
300
Abstract :
A novel pulse generator scheme using a fast recovery pseudospark switch and a stack of high-power semiconductor diodes was tested. The prototype pulse generator is able to drive capacitive loads of over 150 nF, at peak voltages of up to 40 kV, pulse duration of 6 to 15 μs (FWHM, full width at half maximum), and repetition rates of up to 80 pps. Nominal pulse current is between one and 1.5 kA peak. The main limitation in lifetime is caused by the high peak current load in the semiconductor diodes during flashover in the ESP. Diode current can reach up to 8 kA in some cases. A variety of different types of diodes has been investigated, with different physical constructions, i.e. fast high-power press-pack types as well as smaller type, fast, stud-mount diodes. Although the larger press-pack diodes experienced a considerably longer absolute lifetime in these experiments as expected, the comparison of lifetime versus current/charge density on the chip reveals advantages of the stud-mount design (with the diode chip soldered to the substrate) over the press-pack design. The experimental results are discussed in terms of an optimization strategy to achieve the highest power density at minimum cost and volume.
Keywords :
flashover; power semiconductor diodes; pulse generators; pulsed power supplies; spark gaps; 1.5 kA; 40 kV; 6 to 15 mus; 8 kA; capacitive loads; diode current; fast high-power press-pack diode; fast recovery pseudospark switch; flashover; full width at half maximum; high peak current load; high voltage semiconductor diodes; highest power density; lifetime versus current/charge density; nominal pulse current; optimization strategy; peak voltages; pulse duration; pulse generator; pulsed power applications; semiconductor diodes; stud-mount diodes; Electrostatic precipitators; Flashover; Power semiconductor switches; Prototypes; Pulse generation; Semiconductor device testing; Semiconductor diodes; Space vector pulse width modulation; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Conference Record of the Twenty-Fifth International
ISSN :
1076-8467
Print_ISBN :
0-7803-7540-8
Type :
conf
DOI :
10.1109/MODSYM.2002.1189475
Filename :
1189475
Link To Document :
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