Preparation and characterization of SnS thin films obtained by close-spaced vapor transport for solar cell application

Author

Yanuar, Yanuar ; El-Haj Moussa, George ; Guastavino, F. ; Llinarés, C.

Author_Institution

Dept. of Phys., Univ. of Riau, Pekanbaru, Indonesia

fYear

2000

fDate

2000

Firstpage

66

Lastpage

68

Abstract

The tin sulfide (SnS) is one of the most promising materials for low-cost thin film Solar cells application, as its direct band-gap (1.3~1.4 eV) is near the optimum value of 1.5 eV, the hand gap required for an efficient light absorption. Thin films of SnS have been prepared by close spaced vapor transport (CSVT) technique on soda time glass and SnO₂ coated soda lime glass substrates. The characterisations of the thin films obtained were carried out by using XRD, EDS, Hall effect, transmission and reflection. The films obtained had good crystallography quality and electronic properties such as energy band gap 1.32 eV, and p-type conductivity with a hole density 10¹⁷/cm³. The results shows the possibility of this material by using this simple technique for solar cells application

Keywords

X-ray chemical analysis; X-ray diffraction; energy gap; photoconductivity; semiconductor thin films; solar cells; tin compounds; vacuum deposited coatings; 1.3 to 1.4 eV; EDS; Hall effect; SnO₂ coated soda lime glass substrates; SnS; SnS thin films; XRD; close spaced vapor transport; crystallography quality; direct band-gap; electronic properties; energy band gap; fabrication technique; hole density; light absorption; low-cost thin film solar cells; p-type conductivity; reflection; soda time glass substrates; transmission; Absorption; Glass; Hall effect; Optical reflection; Photonic band gap; Photovoltaic cells; Substrates; Tin; Transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Environment and Solar, 2000 Mediterranean Conference for

Conference_Location

Beirut

Print_ISBN

0-7803-7117-8

Type

conf

DOI

10.1109/CMPLES.2000.939863

Filename

939863