Title :
Preparation and characterization of SnS thin films obtained by close-spaced vapor transport for solar cell application
Author :
Yanuar, Yanuar ; El-Haj Moussa, George ; Guastavino, F. ; Llinarés, C.
Author_Institution :
Dept. of Phys., Univ. of Riau, Pekanbaru, Indonesia
Abstract :
The tin sulfide (SnS) is one of the most promising materials for low-cost thin film Solar cells application, as its direct band-gap (1.3~1.4 eV) is near the optimum value of 1.5 eV, the hand gap required for an efficient light absorption. Thin films of SnS have been prepared by close spaced vapor transport (CSVT) technique on soda time glass and SnO2 coated soda lime glass substrates. The characterisations of the thin films obtained were carried out by using XRD, EDS, Hall effect, transmission and reflection. The films obtained had good crystallography quality and electronic properties such as energy band gap 1.32 eV, and p-type conductivity with a hole density 1017/cm3. The results shows the possibility of this material by using this simple technique for solar cells application
Keywords :
X-ray chemical analysis; X-ray diffraction; energy gap; photoconductivity; semiconductor thin films; solar cells; tin compounds; vacuum deposited coatings; 1.3 to 1.4 eV; EDS; Hall effect; SnO2 coated soda lime glass substrates; SnS; SnS thin films; XRD; close spaced vapor transport; crystallography quality; direct band-gap; electronic properties; energy band gap; fabrication technique; hole density; light absorption; low-cost thin film solar cells; p-type conductivity; reflection; soda time glass substrates; transmission; Absorption; Glass; Hall effect; Optical reflection; Photonic band gap; Photovoltaic cells; Substrates; Tin; Transistors; X-ray scattering;
Conference_Titel :
Environment and Solar, 2000 Mediterranean Conference for
Conference_Location :
Beirut
Print_ISBN :
0-7803-7117-8
DOI :
10.1109/CMPLES.2000.939863
