DocumentCode
3329275
Title
Why to Use Dual-Vt, If Single-Vt Serves the Purpose Better under Process Parameter Variations?
Author
Roy, Sudip ; Pal, Ajit
Author_Institution
Dept. of Comput. Sci. & Eng., Indian Inst. of Technol., Kharagpur
fYear
2008
fDate
3-5 Sept. 2008
Firstpage
282
Lastpage
289
Abstract
As the fabrication process technology is moving from submicron region to deep submicron or nanometer region, the impact of process parameter variations are becoming more and more dominant, increasing the loss in yield due to variations in leakage power and delay. As a consequence, parametric yield loss has become a serious concern of the fabrication houses. This has opened up a challenge to the designers´ community to design circuits that are tolerant to process parameter variations, thereby increasing the parametric yield. In this paper we have studied the impact of process parameter variations on the representative static approaches of runtime leakage power reduction and compared them with a proposed approach using Monte-Carlo simulation. The simulation results indicate that the proposed approach provides higher parametric yield compared to the existing representative approaches with comparable reduction in total and leakage power.
Keywords
leakage currents; microfabrication; semiconductor technology; Monte Carlo simulation; delay; fabrication process technology; leakage power reduction; parametric yield loss; process parameter variations; Capacitance; Circuit simulation; Delay; Digital systems; Fabrication; MOSFETs; Power dissipation; Runtime; Subthreshold current; Threshold voltage; Parametric Yield; Process Parameter Variations; Runtime Leakage Reduction; Threshold Voltage Assignment; Transistor Sizing;
fLanguage
English
Publisher
ieee
Conference_Titel
Digital System Design Architectures, Methods and Tools, 2008. DSD '08. 11th EUROMICRO Conference on
Conference_Location
Parma
Print_ISBN
978-0-7695-3277-6
Type
conf
DOI
10.1109/DSD.2008.37
Filename
4669248
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