Title :
Design and simulation of a RF MEMS shunt switch for Ka and V bands and the impact of varying its geometrical parameters
Author :
Mafinejad, Y. ; Kouzani, A.Z. ; Mafinezhad, K. ; Izadi, D.
Author_Institution :
Sch. of Eng., Deakin Univ., Geelong, VIC, Australia
Abstract :
RF MEMS plays an important role in microwave switching. The high performance of RF MEMS shunt such as high bandwidth, low insertion loss, and high isolation have made these switches well suitable for high performing microwave and millimeter wave circuits. This paper presents a RF MEMS shunt capacitive switch for Ka and V band application. This paper investigates the effect of various geometrical parameters on RF characteristics of the switch. The simulation results are presented and discussed.
Keywords :
microswitches; microwave circuits; millimetre wave circuits; switched capacitor networks; Ka band; RF MEMS; RF characteristics; V band; geometrical parameters; shunt capacitive switch; Bandwidth; Insertion loss; Microwave circuits; Millimeter wave circuits; Performance loss; Radio frequency; Radiofrequency microelectromechanical systems; Solid modeling; Switches; Switching circuits;
Conference_Titel :
Circuits and Systems, 2009. MWSCAS '09. 52nd IEEE International Midwest Symposium on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-4479-3
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2009.5235895
