Title :
GaN microwave electronics
Author :
Mishra, U.K. ; Wu, Y.F. ; Keller, B.P. ; Keller, S. ; DenBaars, S.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
The progress of AlGaN/GaN based HEMTs is reviewed. The mobility achieved in these modulation doped structures is over 1500 cm2 V-1 s-1 at 300 K with sheet densities of over 1×1013 cm-2. Ft of over 50 GHz and fmax of over 90 GHz has been demonstrated. Power density of over 2.6 W/mm at 10 GHz has been achieved
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; 10 GHz; 300 K; AlGaN-GaN; HEMTs; III-V semiconductors; microwave electronics; mobility; modulation doped structures; power density; sheet densities; Aluminum gallium nitride; Consumer electronics; Costs; Crystalline materials; Electron mobility; Gallium nitride; HEMTs; MODFETs; Microwave devices; Photonic band gap;
Conference_Titel :
Millimeter Waves, 1997 Topical Symposium on
Conference_Location :
Kanagawa
Print_ISBN :
0-7803-3887-1
DOI :
10.1109/TSMW.1997.702439
