Title :
Inductance simulation using GaAs MESFETs
Author :
Tangsrirat, Worapong ; Surakampontorn, Wanlop ; Riewruja, Vanchai ; Dumawipata, T.
Author_Institution :
Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
Abstract :
This paper proposes a method for an inductance simulation by using GaAs MESFET devices. The realization method is based on the use of a GaAs voltage-to-current transducer and is also suitable for implementation in monolithic integrated circuit form. The circuit has wide bandwidth, good linearity and the simulated inductive reactance value is a linear function of resistor and capacitor. The PSPICE simulation results show that the properties of the circuit are in close agreement with the theoretical prediction
Keywords :
III-V semiconductors; MESFET integrated circuits; active networks; field effect analogue integrated circuits; frequency response; gallium arsenide; inductance; linear network analysis; linear network synthesis; simulation; GaAs; GaAs MESFET; GaAs voltage-to-current transducer; PSPICE simulation; floating inductance; inductance simulation; linearity; monolithic integrated circuit form; performance analysis; wide bandwidth; Bandwidth; Circuit simulation; Gallium arsenide; Inductance; Linearity; MESFETs; Monolithic integrated circuits; Resistors; Transducers; Voltage;
Conference_Titel :
Circuits and Systems, 1998. IEEE APCCAS 1998. The 1998 IEEE Asia-Pacific Conference on
Conference_Location :
Chiangmai
Print_ISBN :
0-7803-5146-0
DOI :
10.1109/APCCAS.1998.743743
