Title :
High-gain wideband V-band multi-stage power MMICs
Author :
Inoue, Takashi ; Hosoya, Kenichi ; Ohata, Keiichi
Author_Institution :
Kansai Electron. Res. Lab., NEC Corp., Otsu, Japan
Abstract :
V-band two-stage and three-stage MMIC wideband power amplifiers and MMIC doubler/amplifier have been designed and fabricated for output stages in transmitters and LO buffer amplifiers. A 0.15 μm T-shaped gate AlGaAs-InGaAs heterojunction FET (HJFET) with high gain at millimeter-wave frequencies is employed as the active device. In the amplifier circuit design here, we utilize matching circuits consisting of RF shorted stubs for the wideband operations with no feedback mechanism, taking account of the circuit stability to prevent parasitic low and intermediate frequency oscillations. A fabricated three stage MMIC power amplifier has exhibited 22 dB linear gain, 12 GHz bandwidth and more than 22 dBm output power, and a doubler/amplifier 9.1 dB conversion-gain, 16.8 dBm output power and 4 GHz bandwidth
Keywords :
III-V semiconductors; JFET integrated circuits; MMIC power amplifiers; aluminium compounds; field effect MIMIC; frequency multipliers; gallium arsenide; impedance matching; indium compounds; millimetre wave frequency convertors; millimetre wave power amplifiers; power integrated circuits; wideband amplifiers; 0.15 micron; 12 GHz; 22 dB; 4 GHz; 60 GHz; 9.1 dB; AlGaAs-InGaAs; EHF; LO buffer amplifiers; MIMIC; MIMIC doubler/amplifier; MM-wave ICs; RF shorted stubs; T-shaped gate HJFET; V-band multi-stage power MMICs; circuit stability; heterojunction FET; high-gain MIMICs; matching circuits; millimeter-wave frequencies; output stages; transmitters; wideband power amplifiers; Bandwidth; Broadband amplifiers; Frequency; Heterojunctions; MMICs; Power amplifiers; Power generation; Radiofrequency amplifiers; Transmitters; Wideband;
Conference_Titel :
Millimeter Waves, 1997 Topical Symposium on
Conference_Location :
Kanagawa
Print_ISBN :
0-7803-3887-1
DOI :
10.1109/TSMW.1997.702440
