Fabrication Technology and Characterization of PTCDA/p-Si Photo-Electronic Detector

The fabrication technology and characterization of PTCDA/p-Si photo-electronic detectors are studied in this paper. The results indicate that Al, in comparison to Au, is preferably suitable for use as the cathode materials of the PTCDA/p-Si photo-electronic detectors. It is also found that the performance of the detectors depends very strongly on the purity of PTCDA. The higher purity of the PTCDA leads to smaller dark current the detectors have, the larger photoelectric current they have. The higher purity of the PTCDA leads to the better I-V characterization of the detector. And the smaller opposite dark current the detectors have, the smaller opposite photoelectric current they have.