Analysis of the causes of field-effect and photovoltaic semiconductor device parameters degradation

Author

Kulinich, O.A. ; Sadova, N.N. ; Lisovskaya, A.A.

Author_Institution

Odessa Mechnikov State Univ., USSR

fYear

1991

fDate

28 Oct-1 Nov 1991

Firstpage

653

Abstract

The causes of field-effect and photovoltaic semiconductor device parameter degradation are analyzed by modern methods of investigation (scanning electron microscopy, with an X-ray microanalyzer, Auger electronic spectroscopy and electrophysical and chemical methods) based on the basic materials study. The dependence of the device parameters under investigation on the basic material defect and dopant compositions, insulator-semiconductor structures, and device production conditions has been determined. The basic parameter degradation mechanisms are found for each of the device types studied. Physical-mathematical models and methods making it possible to diagnose their operational reliability in the process of thermodynamic tests and operations are proposed

Keywords

field effect transistors; reliability; semiconductor device models; semiconductor device testing; semiconductor doping; solar cells; Auger electronic spectroscopy; FET; X-ray microanalyzer; dopant; insulator-semiconductor structures; material defect; models; parameter degradation; reliability; scanning electron microscopy; semiconductor device testing; solar cells; thermodynamic tests; Chemical analysis; Composite materials; Degradation; Insulation; Photovoltaic systems; Scanning electron microscopy; Semiconductor devices; Semiconductor materials; Solar power generation; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, Control and Instrumentation, 1991. Proceedings. IECON '91., 1991 International Conference on

Conference_Location

Kobe

Print_ISBN

0-87942-688-8

Type

conf

DOI

10.1109/IECON.1991.239210

Filename

239210