Title :
Reliability effects in 0.15 μm low dose SIMOX N-MOSFETs designed for low power/low voltage applications
Author :
Dimitrakis, Panagiotis S. ; Jomaah, Jalal ; Balestra, Francis ; Papaioannou, George J.
Author_Institution :
Solid State Sect., Athens Univ., Greece
Abstract :
The effects of hot-carriers during the off-state operation of 0.15 μm low dose SIMOX partially depleted MOSFETs are investigated. A correlation between the ageing characteristics of the MOSFETs and the created defects is presented. The front channel degradation is strongly affected by the back gate bias. This is due to parasitic bipolar transistor. However, the degradation mechanisms of both channels are different. Deep level transient spectroscopy was used for defect evaluation in both channels and interfaces: the front and the back. In depth studies, showed that during the stress two different kinds of defects are created: electron traps similar to those induced after ion implantation of Si and hole traps similar to those induced after electron irradiation of Si
Keywords :
MOSFET; SIMOX; ageing; crystal defects; deep level transient spectroscopy; electron beam effects; electron traps; hole traps; hot carriers; semiconductor device reliability; 0.15 micron; Si; ageing characteristics; back gate bias; channels; deep level transient spectroscopy; defects; degradation mechanisms; electron irradiation; electron traps; front channel degradation; hole traps; hot-carriers effect; ion implantation; leakage current; low dose SIMOX N-MOSFETs; low power applications; low voltage applications; off-state operation; parasitic bipolar transistor; reliability effects; silicon-on-insulator MOSFETs; Aging; Bipolar transistors; Degradation; Electron traps; Hot carrier effects; Hot carriers; Ion implantation; MOSFET circuits; Spectroscopy; Stress;
Conference_Titel :
Environment and Solar, 2000 Mediterranean Conference for
Conference_Location :
Beirut
Print_ISBN :
0-7803-7117-8
DOI :
10.1109/CMPLES.2000.939903
