Title :
Assessment of CNTFET based circuit performance and robustness to PVT variations
Author :
Cho, Geunho ; Kim, Yong-Bin ; Lombardi, Fabrizio
Author_Institution :
Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
Abstract :
Carbon NanoTubes (CNTs) have superior transport properties, excellent thermal conductivity, and high current handling capability; recently the CNT has been proposed as an alternative device technology to supersede CMOS. In this paper, the circuit-level performance of CNT-based FETs (CNTFETs) is initially compared to MOSFETs; simulation is performed for various logic gates and benchmark circuits to assess the sensitivity to PVT variations using the same minimum gate length. The simulation results show that the delay of CNTFET-based gates is about 10 times lower; moreover, the power delay product (PDP) and the leakage power of CNTFET-based gates are lower than MOSFET based gates by orders of magnitude. These orders of improvements in performance metrics are also achieved while attaining excellent robustness to process, voltage, and temperature variations.
Keywords :
carbon nanotubes; field effect transistors; leakage currents; logic gates; nanoelectronics; nanotube devices; thermal conductivity; CNTFET based circuit performance assessment; CNTFET-based gate leakage power; MOSFET based gate leakage power; PVT variations; carbon nanotubes; circuit-level performance; high current handling capability; power delay product; thermal conductivity; transport properties; CMOS technology; Carbon nanotubes; Circuit optimization; Circuit simulation; Delay; FETs; Logic gates; MOSFETs; Robustness; Thermal conductivity; Carbon NanoTube Field Effect Transistors (CNTFETs); Delay; Fanout; PVT variation; Power; Power Delay Product (PDP);
Conference_Titel :
Circuits and Systems, 2009. MWSCAS '09. 52nd IEEE International Midwest Symposium on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-4479-3
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2009.5235961
