Title :
A 1.6 GHz switch mode power amplifier with continuous-time bandpass delta-sigma modulator
Author :
Berroth, Manfred ; Schmidt, Martin ; Heck, Stefan ; Braeckle, Alexander ; Groezing, Markus
Author_Institution :
Inst. of Electr. & Opt. Commun. Eng., Univ. of Stuttgart, Stuttgart, Germany
Abstract :
A continuous-time bandpass delta-sigma modulator (CT BDSM) is designed and fabricated in a SiGe bipolar transistor technology with a transit frequency of 200 GHz. The modulator can be tuned in its center frequency from 1.55 GHz up to 2.45 GHz for mobile base station applications. To drive a GaN high power amplifier a driver amplifier is presented using a complementary bipolar transistor technology.
Keywords :
Ge-Si alloys; III-V semiconductors; UHF integrated circuits; UHF power amplifiers; bipolar integrated circuits; continuous time systems; delta-sigma modulation; gallium compounds; GaN; SiGe; bipolar transistor technology; complementary bipolar transistor technology; continuous-time bandpass delta-sigma modulator; driver amplifier; frequency 1.6 GHz; frequency 200 GHz; mobile base station; switch mode power amplifier; Base stations; Bipolar transistors; Delta modulation; Frequency; Gallium nitride; Germanium silicon alloys; High power amplifiers; Power amplifiers; Silicon germanium; Switches;
Conference_Titel :
Circuits and Systems, 2009. MWSCAS '09. 52nd IEEE International Midwest Symposium on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-4479-3
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2009.5235982
