A 1.6 GHz switch mode power amplifier with continuous-time bandpass delta-sigma modulator

Author

Berroth, Manfred ; Schmidt, Martin ; Heck, Stefan ; Braeckle, Alexander ; Groezing, Markus

Author_Institution

Inst. of Electr. & Opt. Commun. Eng., Univ. of Stuttgart, Stuttgart, Germany

fYear

2009

fDate

2-5 Aug. 2009

Firstpage

1051

Lastpage

1054

Abstract

A continuous-time bandpass delta-sigma modulator (CT BDSM) is designed and fabricated in a SiGe bipolar transistor technology with a transit frequency of 200 GHz. The modulator can be tuned in its center frequency from 1.55 GHz up to 2.45 GHz for mobile base station applications. To drive a GaN high power amplifier a driver amplifier is presented using a complementary bipolar transistor technology.

Keywords

Ge-Si alloys; III-V semiconductors; UHF integrated circuits; UHF power amplifiers; bipolar integrated circuits; continuous time systems; delta-sigma modulation; gallium compounds; GaN; SiGe; bipolar transistor technology; complementary bipolar transistor technology; continuous-time bandpass delta-sigma modulator; driver amplifier; frequency 1.6 GHz; frequency 200 GHz; mobile base station; switch mode power amplifier; Base stations; Bipolar transistors; Delta modulation; Frequency; Gallium nitride; Germanium silicon alloys; High power amplifiers; Power amplifiers; Silicon germanium; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2009. MWSCAS '09. 52nd IEEE International Midwest Symposium on

Conference_Location

Cancun

ISSN

1548-3746

Print_ISBN

978-1-4244-4479-3

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2009.5235982

Filename

5235982