Continuous-Wave Electrically Injected InP/GaInAsP Equilateral-Triangle-Resonator Lasers

Author

Yong-Zhen Huang ; Yong-hong Hu ; Qin Chen ; Shi-Jiang Wang ; Zhong-Chao Fan

Author_Institution

Inst. of Semicond. Chinese Acad. of Sci., Beijing

Volume

4

fYear

2007

fDate

1-5 July 2007

Firstpage

128

Lastpage

131

Abstract

Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are fabricated using standard photolithography and inductively-coupled-plasma etching techniques. Continuous-wave electrically injected 1550 nm ETR laser with side length ranged from 15 to 30 mum are realized at room temperature.

Keywords

arsenic compounds; gallium compounds; indium compounds; optical couplers; optical resonators; photolithography; semiconductor lasers; sputter etching; ETR laser; InP-GaInAsP; continuous-wave electrically injected lasers; equilateral-triangle-resonator lasers; inductively-coupled-plasma etching techniques; microlasers; photolithography; Chemical lasers; Indium phosphide; Optical resonators; Optical waveguides; Pulsed laser deposition; Pump lasers; Quantum well lasers; Semiconductor lasers; Waveguide lasers; Wet etching; Optical resonators; laser resonators; semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2007. ICTON '07. 9th International Conference on

Conference_Location

Rome

Print_ISBN

1-4244-1249-8

Electronic_ISBN

1-4244-1249-8

Type

conf

DOI

10.1109/ICTON.2007.4296357

Filename

4296357