DocumentCode :
3331460
Title :
Gated field emitter using carbon nanotubes for vacuum microelectronic devices
Author :
Jang, Yoon-Taek ; Choi, Chang-Hoon ; Ju, Byeong-Kwon ; Ahn, Jin-Ho ; Lee, Yun-Hi
Author_Institution :
Microsystem Res. Ctr, Korea Inst. of Sci. & Technol., Seoul, South Korea
fYear :
2003
fDate :
19-23 Jan. 2003
Firstpage :
37
Lastpage :
40
Abstract :
We have fabricated a gated field emitter using directly grown carbon nanotubes (CNTs) as an electron emission source. Vertically aligned CNTs were grown at the center of the gate hole using thermal chemical vapor deposition. In order to reduce the leakage current due to flowing current along CNTs grown on the sidewalls of the gate hole, we adopted a new process scheme such as sidewall protector. The leakage current of gated CNT emitter with sidewall protector shows a decrease of 85.8 % compared to that of a conventional structure.
Keywords :
carbon nanotubes; chemical vapour deposition; electron field emission; leakage currents; vacuum microelectronics; C; carbon nanotubes; gated field emitter; leakage current; sidewall protector; thermal chemical vapor deposition; vertically aligned nanotubes; Carbon nanotubes; Chemical vapor deposition; Electron emission; Fabrication; Inductors; Leakage current; Microelectronics; Printing; Protection; Sputter etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
ISSN :
1084-6999
Print_ISBN :
0-7803-7744-3
Type :
conf
DOI :
10.1109/MEMSYS.2003.1189681
Filename :
1189681
Link To Document :
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