Single crystal silicon four-terminal nano-wire shear stress gauge for nano mechanical sensors

P-type single crystal silicon four-terminal nanowire shear stress gauge (Si FSSG) was fabricated by electron-beam direct writing. The piezoresistance was investigated in order to demonstrate the usefulness of these sensing elements as mechanical sensors. The shear piezoresistance coefficient π₄₄ was found to be 77.4×10^-11 Pa^-1 at Ns=9-10¹⁹ cm^-3. This value was 54.8 % larger than the value obtained from p⁺ diffused piezoresistors, which are used in conventional mechanical sensors.