DocumentCode :
3331545
Title :
Influence of O2 plasma treatment on H2 post-treated BZO thin films for TCO of a-Si solar cell
Author :
Yoo, Ha Jin ; Son, Chang Gil ; Choi, Eun Ha ; Cho, Guangsup ; Kwon, Gi Chung ; Cho, Won Tea ; Park, Sang Gi
Author_Institution :
Dept. of Electrophys., Kwangwoon Univ., Seoul, South Korea
fYear :
2010
fDate :
20-24 June 2010
Firstpage :
1
Lastpage :
1
Abstract :
In order to achieve a high efficient a-Si solar cell, the TCO (transparent conductive oxide) substrates are required to be a low sheet resistivity, a high transparency, and a textured surface with light trapping effect. Recently, a zinc oxide (ZnO) thin film attracts our attention as new coating material having a good transparent and conductive for TCO of solar cells1-2.
Keywords :
II-VI semiconductors; boron; hydrogen; oxygen; plasma CVD coatings; semiconductor growth; semiconductor thin films; silicon; solar cells; wide band gap semiconductors; zinc compounds; H2; O2; Si; Si thin film solar cell; ZnO:B; coating material; light trapping effect; low sheet resistivity; metal organic chemical vapor deposition; plasma treatment; post-treated thin films; transparent conductive oxide; Hydrogen; Optical films; Photovoltaic cells; Plasma applications; Plasma measurements; Plasma properties; Surface morphology; Surface treatment; Transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2010 Abstracts IEEE International Conference on
Conference_Location :
Norfolk, VA
ISSN :
0730-9244
Print_ISBN :
978-1-4244-5474-7
Electronic_ISBN :
0730-9244
Type :
conf
DOI :
10.1109/PLASMA.2010.5534131
Filename :
5534131
Link To Document :
بازگشت