DocumentCode
3331633
Title
Fabrication of a ZnO piezoelectric cantilever with a high-aspect-ratio nano tip
Author
Lee, Sang H. ; Lee, Seung S. ; Jeon, Jong Up ; Ro, Kwangchoon
Author_Institution
Pohang Univ. of Sci. & Technol., South Korea
fYear
2003
fDate
19-23 Jan. 2003
Firstpage
72
Lastpage
75
Abstract
This paper reports the fabrication process of a ZnO piezoelectric micro cantilever with a high- aspect-ratio (HAR) nano tip for the scanning probe microscopy (SPM). The HAR nano tip has 5 μm side length, over 15 μm height, and less than 30nm tip radius, which is built on the cantilevers with 200μm and 300μm length. The designed resonance frequency and spring constant of cantilever with 300μm length are 28.41kHz and 0.6986N/m, respectively. To prevent the distortion of data by the cantilever, the HAR nano tip is fabricated using deep RIE process and LPCVD poly-Si deposition. These steps protect nano tips during the whole process and minimize tip damage. To compensate residual stress, the multi-layered structure is used. It is composed of silicon nitride and poly silicon which have tensile and compressive stresses, respectively. And, to prevent ZnO breakdown and metal oxidation during anodic bonding process, internal metal patterns are isolated from the pyrex glass. After the boding process, they are connected with external electrodes through the via holes in pyrex glass.
Keywords
II-VI semiconductors; internal stresses; micromechanical devices; piezoelectric materials; scanning probe microscopy; sputter etching; zinc compounds; 15 micron; 200 micron; 28.41 kHz; 30 nm; 300 micron; 5 micron; LPCVD poly-Si deposition; Si; ZnO; ZnO piezoelectric microcantilever; anodic bonding process; deep RIE process; high-aspect-ratio nano tip; residual stress; scanning probe microscopy; spring constant; Fabrication; Glass; Protection; Residual stresses; Resonance; Resonant frequency; Scanning probe microscopy; Silicon; Springs; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on
ISSN
1084-6999
Print_ISBN
0-7803-7744-3
Type
conf
DOI
10.1109/MEMSYS.2003.1189690
Filename
1189690
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